253 GHz fT Graded-Channel AlGaN/GaN High-Electron-Mobility Transistors with New Cliff Barrier for Millimeter Wave High-Frequency Applications

被引：0

作者：

Franklin, S. Angen ^{[1
]}

Jebalin, I. V. Binola K. ^{[2
]}

Chander, Subhash ^{[3
]}

Rani, Sylvia Juliet ^{[1
]}

Nirmal, D. ^{[1
]}

机构：

[1] Karunya Inst Technol & Sci, Dept Elect & Commun Engn, Coimbatore 641114, India

[2] Karunya Inst Technol & Sci, Dept Biomed Engn, Coimbatore 641114, India

[3] Solid State Phys Lab DRDO, Lucknow Rd, Timarpur 110054, Delhi, India

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年

关键词：

cliff barrier; high-electron-mobility transistor; power-added efficiency; process steps; radio frequency; LAYER THICKNESS; GAN; GATE; PERFORMANCE; IMPACT; HEMTS; RF;

D O I：

10.1002/pssa.202400552

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this research work, a graded-channel AlGaN/GaN high-electron-mobility transistor (HEMT) featuring a cliff AlGaN barrier with a gate length of 60 nm is investigated. The inclusion of a foot cliff barrier layer confines the 3DEG distribution, thereby reducing electron scattering and potentially improving carrier mobility. The cliff-graded-channel device shows a peak cutoff frequency fT of 253 GHz and power-added efficiency of 68% at 30 GHz, which represents a significant 60% improvement in comparison with conventional graded-channel devices. These results clearly indicate that the graded-channel AlGaN/GaN HEMT with a new cliff barrier design has great potential for mmW applications.

引用

页数：6

共 32 条

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