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- [21] PHOTON-EMISSION FROM HOT-ELECTRONS IN SILICON[J]. PHYSICAL REVIEW B, 1995, 52 (15): : 10993 - 10999VILLA, SLACAITA, ALPACELLI, A
- [22] Vogt M. R., 2015, THESIS GW LEIBNIZ U, P139
Stimulated Secondary Emission of Single-Photon Avalanche Diodes
被引：1
作者：
Raymond, Kurtis
[1
]
Retiere, Fabrice
[1
]
Lewis, Harry
[1
]
Capra, Andrea
[1
]
Mccarthy, Duncan
[5
]
Croix, Austin de St
[1
]
Gallina, Giacomo
[3
]
Mclaughlin, Joe
Martin, Juliette
[4
]
Massacret, Nicolas
[1
]
Agnes, Paolo
[5
]
Underwood, Ryan
[1
]
Koulosousas, Seraphim
[6
]
Margetak, Peter
[2
]
机构：
[1] TRIUMF, Vancouver, BC V6T 2A3, Canada
[2] Univ British Columbia, Vancouver, BC V6T 1Z4, Canada
[3] Princeton Univ, Phys Dept, Princeton, NJ 08544 USA
[4] UCL, Dept Phys & Astron, London WC1E 6BT, England
[5] GSSI, I-67100 Laquila, Italy
[6] Royal Holloway Univ London, Dept Phys, Egham TW20 0EX, England
基金：
加拿大自然科学与工程研究理事会;
关键词：
Single-photon avalanche diodes;
Photonics;
Microscopy;
Cameras;
Voltage control;
Crosstalk;
Measurement by laser beam;
Laser modes;
Detectors;
Temperature distribution;
Avalanche multiplication;
laser-stimulated avalanche;
microscopy;
silicon photomultiplier (SiPM);
single-photon avalanche diode (SPAD);
SiPM crosstalk;
SiPM emission;
SILICON;
EFFICIENCY;
BREAKDOWN;
D O I：
10.1109/TED.2024.3469918
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Large-area next-generation physics experiments rely on using silicon photomultiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external crosstalk occurs when secondary photons produced during a charge avalanche escape from an SiPM and trigger other devices within a detector system. This work presents measured spectra of the secondary photons emitted from the Hamamatsu VUV4 and Fondazione Bruno Kessler (FBK) VUV-HD3 SiPMs stimulated by laser light, near operational voltages. This work describes the microscope for the injection and emission of light (MIEL) setup, which is an experimental apparatus constructed for this purpose. Measurements have been performed at a range of overvoltage values and temperatures from 86 to 293 K. The number of photons produced per avalanche at the source is calculated from the measured spectra and determined to be 49 +/- 10 and 61 +/- 11 photons produced per avalanche for the VUV4 and VUV-HD3, respectively, at 4-V overvoltage. No significant temperature dependence is observed within the measurement uncertainties. The overall number of photons emitted per avalanche from each SiPM device is also reported.
引用
收藏
页码：6871 / 6879
页数：9
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