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The Effect of Antisolvent Treatment on the Growth of 2D/3D Tin Perovskite Films for Solar Cells
被引:0
|作者:
Min, Ganghong
[1
,2
]
Westbrook, Robert J. E.
[1
,2
,3
]
Jiang, Meihuizi
[1
,2
]
Taddei, Margherita
[3
]
Li, Ang
[1
,2
]
Webb, Thomas
[1
,2
,4
]
Sathasivam, Sanjayan
[5
,6
]
Azaden, Amanz
[1
,2
]
Palgrave, Robert G.
[6
]
Ginger, David S.
[3
]
Macdonald, Thomas J.
[1
,2
,7
]
Haque, Saif A.
[1
,2
]
机构:
[1] Imperial Coll London, Dept Chem, Mol Sci Res Hub, London W12 0BZ, England
[2] Imperial Coll London, Ctr Processable Elect, Mol Sci Res Hub, London W12 0BZ, England
[3] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[4] Univ Surrey, Adv Technol Inst, Dept Elect & Elect Engn, Guildford GU2 7XH, Surrey, England
[5] London South Bank Univ, Sch Engn, London SE1 0AA, England
[6] UCL, Dept Chem, London WC1H 0AJ, England
[7] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源:
ACS ENERGY LETTERS
|
2024年
/
10卷
/
01期
基金:
英国工程与自然科学研究理事会;
关键词:
HALIDE PEROVSKITES;
LEAD;
FABRICATION;
EFFICIENCY;
STABILITY;
OXIDATION;
SOLVENT;
D O I:
10.1021/acsenergylett.4c02745
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Antisolvent treatment is used in the fabrication of perovskite films to control grain growth during spin coating. We study widely incorporated aromatic hydrocarbons and aprotic ethers, discussing the origin of their performance differences in 2D/3D Sn perovskite (PEA0.2FA0.8SnI3) solar cells. Among the antisolvents that we screen, diisopropyl ether yields the highest power conversion efficiency in solar cells. We use a combination of optical and structural characterization techniques to reveal that this improved performance originates from a higher concentration of 2D phase, distributed evenly throughout the 2D/3D Sn perovskite film, leading to better crystallinity. This redistribution of the 2D phase, as a result of diisopropyl ether antisolvent treatment, has the combined effect of decreasing the Sn4+ defect density and background hole density, leading to devices with improved open-circuit voltage, short-circuit current, and power conversion efficiency.
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页码:254 / 262
页数:9
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