Development of ZnO Buffer Layers for As-Doped CdSeTe/CdTe Solar Cells with Efficiency Exceeding 20%

被引：0

作者：

Kujovic, Luksa ^{[1
]}

Liu, Xiaolei ^{[1
]}

Togay, Mustafa ^{[1
]}

Abbas, Ali ^{[1
]}

Law, Adam M. ^{[1
]}

Jones, Luke O. ^{[1
]}

Curson, Kieran M. ^{[1
]}

Barth, Kurt L. ^{[1
]}

Bowers, Jake W. ^{[1
]}

Walls, John M. ^{[1
]}

Oklobia, Ochai ^{[2
]}

Lamb, Dan A. ^{[2
]}

Irvine, Stuart J. C. ^{[2
]}

Zhang, Wei ^{[3
]}

Lee, Chungho ^{[3
]}

Nagle, Timothy ^{[3
]}

Lu, Dingyuan ^{[3
]}

Xiong, Gang ^{[3
]}

机构：

[1] Loughborough Univ, Ctr Renewable Energy Syst Technol CREST, Wolfson Sch Mech Elect & Mfg Engn, Loughborough LE11 3TU, England

[2] Swansea Univ, Fac Sci & Engn, Ctr Solar Energy Res CSER, Ctr Integrat Semicond Mat CISM, Bay Campus, Swansea SA1 8EN, Wales

[3] Calif Technol Ctr CTC, First Solar Inc, 1035 Walsh Ave, Santa Clara, CA 95050 USA

来源：

ADVANCED MATERIALS TECHNOLOGIES | 2025年 / 10卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

buffer layer; CdSeTe/CdTe; solar cells; ZnO; CADMIUM TELLURIDE; PASSIVATION; CARBON;

D O I：

10.1002/admt.202401364

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The front buffer layer plays an important role in CdSeTe/CdTe solar cells and helps achieve high conversion efficiencies. Incorporating ZnO buffer layers in the CdSeTe/CdTe device structure has led to highly efficient and stable solar cells. In this study, the optimization of ZnO buffer layers for CdSeTe/CdTe solar cells is reported. The ZnO films are radio frequency sputter-deposited on SnO2:F coated soda-lime glass substrates. The substrate temperature for the ZnO deposition is varied from 22 to 500 degrees C. An efficiency of 20.74% is achieved using ZnO deposited at 100 degrees C. The ZnO thickness is varied between 40 nm and 75 nm. Following the ZnO depositions, devices were fabricated using First Solar's CdSeTe/CdTe absorber, CdCl2 treatment, and back contact. The optimal ZnO deposition temperature and thickness is 100 degrees C and 65 nm, respectively. The STEM-EDX analysis shows that within the detection limits, chlorine is not detected at the front interface of the devices using ZnO deposited at 22 degrees C and 100 degrees C. However, depositing ZnO at 500 degrees C results in chlorine segregation appearing at the ZnO/CdSeTe boundary. This suggests that chlorine is not needed to passivate the ZnO/CdSeTe interface during the lower temperature depositions. The nanocrystalline ZnO deposited at lower temperatures results in a high-quality interface.

引用

页数：8