Random number generation driven by voltage-controlled magnetic anisotropy and their use in probabilistic computing

被引:0
|
作者
Raimondo, Eleonora [1 ]
Grimaldi, Andrea [2 ]
Giordano, Anna [2 ]
Chiappini, Massimo [1 ]
Carpentieri, Mario [3 ]
Finocchio, Giovanni [4 ]
机构
[1] Ist Nazl Geofis & Vulcanol, Rome, Italy
[2] Univ Messina, Dept Engn, Messina, Italy
[3] Politecn Bari, Dept Elect & Informat Engn, Bari, Italy
[4] Univ Messina, Dept Math & Comp Sci, Phys Sci & Earth Sci, Messina, Italy
关键词
D O I
10.1109/NANO61778.2024.10628878
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ising machines are becoming increasingly popular as efficient and hardware-friendly solvers for combinatorial optimization problems. One promising approach for solving Ising models is through probabilistic Ising machines (PIMs), wherein conventional bits are replaced by bistable tunable stochastic bits (p-bits). The generation of random numbers is a crucial component of PIMs. Stochastic magnetic tunnel junctions (MTJs) have been proposed to physically implement p-bits; however, their scalability faces challenges due to the required fine tuning of a small energy barrier. Alternatively, the voltage-controlled magnetic anisotropy (VCMA) effect in deterministic perpendicular MTJs can be used to generate random binary states. Here, we present a comprehensive phase diagram to delineate the characteristics of VCMA pulses for the generation of true random numbers. We introduce the design of an MTJ-based p-bit, where the precision of the stochastic component is linked to the number of MTJs employed. We explore the impact of adaptive p-bit precision in solving an instance of a maximum satisfiability problem. The results show that a limited number of VCMA-based MTJs (less than 20) are sufficient to ensure performance comparable to the software solutions.
引用
收藏
页码:326 / 330
页数:5
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