Random number generation driven by voltage-controlled magnetic anisotropy and their use in probabilistic computing

被引:0
|
作者
Raimondo, Eleonora [1 ]
Grimaldi, Andrea [2 ]
Giordano, Anna [2 ]
Chiappini, Massimo [1 ]
Carpentieri, Mario [3 ]
Finocchio, Giovanni [4 ]
机构
[1] Ist Nazl Geofis & Vulcanol, Rome, Italy
[2] Univ Messina, Dept Engn, Messina, Italy
[3] Politecn Bari, Dept Elect & Informat Engn, Bari, Italy
[4] Univ Messina, Dept Math & Comp Sci, Phys Sci & Earth Sci, Messina, Italy
关键词
D O I
10.1109/NANO61778.2024.10628878
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ising machines are becoming increasingly popular as efficient and hardware-friendly solvers for combinatorial optimization problems. One promising approach for solving Ising models is through probabilistic Ising machines (PIMs), wherein conventional bits are replaced by bistable tunable stochastic bits (p-bits). The generation of random numbers is a crucial component of PIMs. Stochastic magnetic tunnel junctions (MTJs) have been proposed to physically implement p-bits; however, their scalability faces challenges due to the required fine tuning of a small energy barrier. Alternatively, the voltage-controlled magnetic anisotropy (VCMA) effect in deterministic perpendicular MTJs can be used to generate random binary states. Here, we present a comprehensive phase diagram to delineate the characteristics of VCMA pulses for the generation of true random numbers. We introduce the design of an MTJ-based p-bit, where the precision of the stochastic component is linked to the number of MTJs employed. We explore the impact of adaptive p-bit precision in solving an instance of a maximum satisfiability problem. The results show that a limited number of VCMA-based MTJs (less than 20) are sufficient to ensure performance comparable to the software solutions.
引用
收藏
页码:326 / 330
页数:5
相关论文
共 50 条
  • [1] A Voltage-Controlled Magnetic Anisotropy based True Random Number Generator
    Quizon, Lawrence Roman A.
    Alvarez, Anastacia B.
    Santos, Christoper G.
    Rosales, Marc D.
    Hizon, John Richard E.
    Sabino, Maria Patricia Rouelli G.
    18TH INTERNATIONAL SOC DESIGN CONFERENCE 2021 (ISOCC 2021), 2021, : 159 - 160
  • [2] Probabilistic computing with voltage-controlled dynamics in magnetic tunnel junctions
    Shao, Yixin
    Duffee, Christian
    Raimondo, Eleonora
    Davila, Noraica
    Lopez-Dominguez, Victor
    Katine, Jordan A.
    Finocchio, Giovanni
    Khalili Amiri, Pedram
    NANOTECHNOLOGY, 2023, 34 (49)
  • [3] Skyrmion motion driven by the gradient of voltage-controlled magnetic anisotropy
    Xia, Haiyan
    Song, Chengkun
    Jin, Chendong
    Wang, Jinshuai
    Wang, Jianbo
    Liu, Qingfang
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 458 : 57 - 61
  • [4] Antiferromagnetic Parametric Resonance Driven by Voltage-Controlled Magnetic Anisotropy
    Tomasello, Riccardo
    Verba, Roman
    Lopez-Dominguez, Victor
    Garesci, Francesca
    Carpentieri, Mario
    Di Ventra, Massimiliano
    Amiri, Pedram Khalili
    Finocchio, Giovanni
    PHYSICAL REVIEW APPLIED, 2022, 17 (03)
  • [5] Random Bitstream Generation Using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions
    Liu, Samuel
    Kwon, Jaesuk
    Bessler, Paul W. W.
    Cardwell, Suma G. G.
    Schuman, Catherine
    Smith, J. Darby
    Aimone, James B. B.
    Misra, Shashank
    Incorvia, Jean Anne C.
    IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2022, 8 (02): : 194 - 202
  • [6] Review of voltage-controlled magnetic anisotropy and magnetic insulator
    Dai, Bingqian
    Jackson, Malcolm
    Cheng, Yang
    He, Haoran
    Shu, Qingyuan
    Huang, Hanshen
    Tai, Lixuan
    Wang, Kang
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 563
  • [7] Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy
    Yang, Seungmo
    Son, Jong Wan
    Ju, Tae-Seong
    Tran, Duc Minh
    Han, Hee-Sung
    Park, Sungkyun
    Park, Bae Ho
    Moon, Kyoung-Woong
    Hwang, Chanyong
    ADVANCED MATERIALS, 2023, 35 (09)
  • [8] Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy
    Favaro, D.
    Kim, W.
    Ranjbar, S.
    Monteiro, M. Gama
    Carpenter, R.
    Rao, S.
    Van Beek, S.
    Labbate, L.
    Van Houdt, J.
    Temst, K.
    Couet, S.
    PHYSICAL REVIEW APPLIED, 2025, 23 (01):
  • [9] Voltage-controlled magnetic anisotropy in MgO/PtMnAs heterostructures
    Hu, Yue
    Yan, Shiming
    Gao, Shiran
    Zhao, Chengyang
    Qiao, Wen
    Bai, Ru
    Zhou, Tiejun
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (10):
  • [10] Voltage-controlled magnetic anisotropy in MgO/PtMnAs heterostructures
    Yue Hu
    Shiming Yan
    Shiran Gao
    Chengyang Zhao
    Wen Qiao
    Ru Bai
    Tiejun Zhou
    Applied Physics A, 2023, 129