Optimizing Shortwave Wideband RF Amplifier: Study of Transmission Line Transformer Construction Methods

被引:0
|
作者
Krupa, Grzegorz [1 ]
Budzyn, Grzegorz [1 ]
机构
[1] Wroclaw Univ Sci & Technol, Dept Elect Photon & Microsyst, Stanislawa Wyspianskiego 27, PL-50370 Wroclaw, Poland
关键词
Amplifier; shortwave; Transmission Line Transformer (TLT); wideband; LDMOS;
D O I
10.13164/re.2024.0537
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a study of six physical trans- mission line transformers (TLTs) designed to provide wide- band output matching for laterally diffused metal oxide semi- conductor (LDMOS) transistors within a push-pull amplifier operating in the 1.8-30 MHz spectrum with an output power of 600 W. While the mathematical model of TLTs is well de- scribed in the literature, the impact of physical construction methods on impedance matching and real amplifier perfor- mance is more challenging to ascertain. This paper compares six different TLTs built on various ferrite cores and employing different implementations of transmission lines. Return loss below -14 dB was achieved from 1.65 to 37.4 MHz, with most of the tested transformers exhibiting return loss better than -10 dB up to 50 MHz. The study also presents the impact of transmission line implementation on impedance match- ing using both special-purpose low impedance coaxial cable and a combination of general-purpose coaxial cables con- nected in parallel. Comparison of three chosen transformers in a real RF amplifier shows that using parallel transmission lines can lead to a return loss comparable to that of a special- purpose coaxial cable, although at the cost of lower efficiency and output power. Second harmonic cancellation effect was also investigated for three transformers.
引用
收藏
页码:537 / 551
页数:15
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