Demonstration of InGaN full-color monolithic micro-LED display using stacking and selective removal of the light-emitting layer

被引：0
作者：
Goshonoo, Koichi [1 ]
Okuno, Koji [1 ]
Ohya, Masaki [1 ]
机构：
[1] Toyoda Gosei Co Ltd, 710 Origuchi, Inazawa, Aichi 4901312, Japan
来源：
APPLIED PHYSICS EXPRESS | 2025年 / 18卷 / 02期
关键词：
LED; GaN; micro-LED; monolithic micro-LED;
D O I：
10.35848/1882-0786/adb5ec
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A full-color monolithic micro-light-emitting diode (LED) display based on InGaN quantum wells is demonstrated. We stacked red, green, and blue (RGB) light-emitting layers and selectively removed and regrew a p-type layer to create distinct areas on a single chip that emitted RGB colors. Subsequently, we fabricated a full-color monolithic micro-LED chip with a pixel pitch of 30 mu m and pixel number of 96 x 96. Each color subpixel emits light with a single peak. We obtained a full-color image by driving the chip using a microcontroller. The proposed semiconductor process-based method enables the fabrication of low-cost and high-resolution microdisplays.
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页数：6
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