Dicyanocarbene-Induced Metal-Free Efficient Quinoidization for the Development of Fused N-Type Organic Semiconductors

被引:0
作者
Wu, Runshi [1 ,2 ]
Huang, Fei [3 ]
Xu, Renjie [1 ,2 ]
Liu, Wuyue [1 ]
Zhang, Cheng [3 ]
Zhu, Xiaozhang [1 ,2 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
[3] Sichuan Univ, Coll Chem, Key Lab Green Chem & Technol, Minist Educ, Chengdu 610064, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金; 国家重点研发计划;
关键词
Organic semiconductors; <italic>n</italic>-Type molecular semiconductors; Quinoidal materials; Quinoidization reactions; ELECTRON-ACCEPTORS;
D O I
10.1002/anie.202419318
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Dicyanomethylene-terminated quinoidal materials are promising n-type organic semiconductors featuring excellent electron mobilities and air stability. Traditional synthetic methods of these materials such as Takahashi reaction, require the use of expensive palladium catalyst and halogenated substrates. However, for electron-rich fused aromatic compounds, the poor stability after halogenation renders their halogenated derivatives unsuitable as reaction precursors. To address this issue, we present a new metal-free synthetic approach using 2-(dimethylsulfaneylidene)malononitrile as the quinoidization reagent, which is successfully applied to various electron-rich fused aromatic compounds, leading to the corresponding quinoidal compounds with high yields up to 94 %. We proposed the reaction mechanism, and investigated the physical properties of four fused quinoidal materials based on highly electron-rich fused aromatic compounds, which are scarce to be synthesized by the traditional method. Furthermore, these fused quinoidal materials were utilized in field-effect transistors, achieving high electron mobilities up to 1.33 cm2 V-1 s-1. We provide an effective synthetic approach to expand the library of high-performance n-type small-molecule semiconductors.
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页数:6
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