Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films Using Ultralow Electron Temperature Plasma

被引：2

作者：

Kim, Min-Seok ^{[1
]}

Lim, Chang-Min ^{[1
]}

Kim, Sung Hoon ^{[2
]}

Kim, Dongmin ^{[2
]}

Jeon, Hyeongtag ^{[2
,3
]}

Chung, Chin Wook ^{[1
,2
]}

机构：

[1] Hanyang Univ, Div Elect Engn, Seoul 04763, South Korea

[2] Hanyang Univ, Div Nanoscale Semicond Engn, Seoul 04763, South Korea

[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2025年 / 17卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

atomic layer deposition; plasma-enhanced atomic layerdeposition; electron temperature; ultralow electrontemperature plasma; titanium nitride; CHEMICAL-VAPOR-DEPOSITION; TITANIUM NITRIDE; STEP-COVERAGE; GRID BIAS; DAMAGE; BARRIER; RESISTANCE; QUALITY;

D O I：

10.1021/acsami.4c17406

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultralow electron temperature (ULET, T-e < 0.5 eV) plasmas are applied to atomic layer deposition (ALD) for damage-free plasma processing. The effects of ULET plasma on the ALD of titanium nitride (TiN) thin films are investigated. The ULET plasma-enhanced ALD (ULET-PEALD) reduces TiN surface roughness by 60%, from 0.78 to 0.3 nm, compared to remote PEALD, and decreases resistivity from 430 mu Omega<middle dot>cm to 325 mu Omega<middle dot>cm, while improving crystallinity. Unlike remote plasma sources, ULET plasma causes less surface damage due to its lower ion energy, enabling low-energy ion surface treatment. The generation mechanism of ULET plasma and the ULET-PEALD process are explained in detail, along with an analysis of the deposited films. ULET plasmas offer great potential for applications in processes that were previously limited by concerns over plasma-induced damage.

引用

页码：11227 / 11235

页数：9

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