Plasmonically enhanced solar-blind self-powered photodetector array utilizing Pt nanoparticles-modified Ga2O3 nanorod heterojunction

Low-dimensional Ga2O3 monocrystalline micro/nanostructures show promising application prospects in largearea arrays, integrated circuits, and flexible optoelectronic devices, owing to their exceptional optoelectronic performance and scalability for mass production. Herein, we developed an 8 x 8 array of high-performance solar-blind ultraviolet photodetectors based on Pt nanoparticles-modified Ga2O3 (PtNPs@Ga2O3) nanorod film heterojunction with p-GaN substrate serving as the hole transporting layer. The PtNPs@Ga2O3/GaN heterojunction detector units exhibit outstanding photovoltaic performance at 0 V bias, demonstrating high responsivity (189.0 mA/W), specific detectivity (4.0 x 1012 Jones), external quantum efficiency (92.4%), and swift response time (674/692 mu s) under an irradiance of 1 mu W/cm2 at 254 nm. Their exceptional performance stands out among competitors of the same type. In addition, the detector array demonstrated satisfactory results in a conceptual demonstration of high-resolution imaging, benefiting from the excellent stability and uniformity exhibited by its array units. These findings provide a straightforward and viable method for developing a high-performance solar-blind ultraviolet detector array based on low-dimensional Ga2O3 nanorod monocrystalline, demonstrating their potential advancement in large-area, integrable, and flexible optoelectronic devices. (c) 2024 Chinese Laser Press