A W-Band LNA with 24.9-dB Gain and 4.8-dB Noise Figure in 130-nm SiGe BiCMOS

被引：0

作者：

Lv, Wenyan ^{[1
]}

Chen, Jixin ^{[1
]}

Zhou, Peigen ^{[1
]}

机构：

[1] Southeast Univ, Sch Informat Sci & Engn, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

来源：

2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS 2024 | 2024年

基金：

中国国家自然科学基金;

关键词：

low noise amplifier (LNA); noise figure (NF); noise reduction technique; SiGe BiCMOS; W-band;

D O I：

10.1109/IWS61525.2024.10713611

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, a W-Band cascode low noise amplifier (LNA) is fabricated in a 130-nm SiGe BiCMOS technology. The inductive emitter degeneration technique and serial inductor noise reduction technique are applied for optimizing noise and gain performance. The chip occupies a core area of 0.08 mm(2). This integrated LNA achieves a measured maximum gain of 24.9 dB at 94 GHz and a simulated minimum noise figure of 4.8 dB at 83 GHz with a 3 dB bandwidth spanning from 83 GHz to 103 GHz, making it a promising candidate for high-performance radiometer frontends in phased arrays for high speed wireless communication and automotive radars systems.

引用

页数：3

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