Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications

被引:1
作者
Chandrasekhar, Chakali [1 ]
Basha, Mohammed Mahaboob [2 ]
Das, Sari Mohan [3 ]
Hemakesavulu, Oruganti [4 ]
Dholvan, Mohan [2 ]
Syed, Javed [5 ]
机构
[1] Sri Venkateswara Coll Engn, Dept ECE, Tirupati 517507, AP, India
[2] Sreenidhi Inst Sci & Technol Autonomous, Dept ECE, Hyderabad 501301, TG, India
[3] SVR Engn Coll, Dept ECE, Nandyal 518501, AP, India
[4] Annamacharya Univ, Dept EEE, Rajampet 516126, AP, India
[5] King Khalid Univ, Coll Engn, Dept Mech Engn, Abha 61421, Saudi Arabia
关键词
low threshold voltage; power-efficient; sub-threshold operation; multi-threshold CMOS; IoT applications; HIGH-SPEED; CURRENT MIRROR; SUBTHRESHOLD; LOGIC; ROBUST;
D O I
10.3390/mi16010064
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. The represented low-power LS structure is a general blend of both pull-up and pull-down networks that perform level-up or level-down shifts. The proposed PVLS is incorporated with the multi-threshold CMOS technique and a load-balancing driving split inverter to limit high static current, leakage power, and performance degradation. The schematic structure could be able to convert voltages from low to high as well as high to low. The architecture design has the lowest silicon area. The implementation of the proposed design was taken under 55 nm CMOS technology. The represented LS could be able to convert voltage ranges between 0.3 V and 1.3 V, which has a dynamic power of 2.00 nW. The overall propagation delay of the LS is 90 ps and an area of 7.66 mu m2 for an input frequency of 1 MHz.
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页数:13
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