Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures

被引：5

作者：

Wang, Wenxiang ^{[1
]}

Wei, Zheng ^{[2
]}

Li, Yong Jun ^{[2
]}

You, Jiawang ^{[2
]}

Li, Xiaohuan ^{[2
]}

He, Jinjin ^{[2
]}

Mao, Han ^{[2
]}

Jin, Jiyou ^{[2
]}

Sun, Lianfeng ^{[2
]}

Dai, Zhaohe ^{[1
]}

机构：

[1] Peking Univ, Coll Engn, Dept Mech & Engn Sci, State Key Lab Turbulence & Complex Syst, Beijing 100871, Peoples R China

[2] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Nanofabricat Lab, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 02期

基金：

中国国家自然科学基金;

关键词：

CARBON NANOTUBE TRANSISTORS; LAYERED MATERIALS; MEMORY; HYSTERESIS; ULTRAFAST; TRANSPORT; DENSITY;

D O I：

10.1063/5.0245016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rapid evolution of devices based on low-dimensional materials such as MoS2 and single-walled carbon nanotubes (SWNTs) has garnered significant interest for high-performance field-effect transistor (FET) applications. We present a multifunctional MoS2/SWNT device exhibiting non-monotonic current modulation with a rectifying ratio of up to 600. The device also demonstrates remarkable optoelectronic memory performance, including fast erasing/writing times (20.1/1.9 ms), a high erasing/writing ratio (10(4)), multilevel data storage, robust retention (10 000 s), and excellent endurance (1000 cycles). Additionally, we demonstrate ternary inverters combining SWNTs FETs with MoS2/SWNTs heterostructure FETs, highlighting their potential in advanced logic applications.

引用

页数：7

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