High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3

被引:0
作者
Rindert, Viktor [1 ,2 ,3 ]
Galazka, Zbigniew [4 ]
Schubert, Mathias [1 ,2 ,5 ]
Darakchieva, Vanya [1 ,2 ,3 ,6 ]
机构
[1] Lund Univ, NanoLund & Solid State Phys, S-22100 Lund, Sweden
[2] Lund Univ, Terahertz Mat Anal Ctr, THeMAC, S-22100 Lund, Sweden
[3] Lund Univ, Ctr Nitride Technol 3, C3NiT Janzen, S-22100 Lund, Sweden
[4] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany
[5] Univ Nebraska Lincoln, Dept Elect & Comp Engn, Lincoln, NE 68588 USA
[6] Linkoping Univ, Dept Phys Chem & Biol IFM, Wallenberg Initiat Mat Sci Sustainabil, SE-58183 Linkoping, Sweden
基金
美国国家科学基金会; 瑞典研究理事会;
关键词
STANDARDIZATION; SYMMETRY; CHROMIUM;
D O I
10.1063/5.0255802
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron paramagnetic resonance of Cr3+ ions in beta-Ga2O3 is investigated using terahertz spectroscopic ellipsometry under magnetic field sweeping, a technique that enables the polarization resolving capabilities of ellipsometry for magnetic resonance measurements. We employed a single-crystal chromium-doped beta-Ga2O3 sample, grown by the Czochralski method, and performed ellipsometry measurements at magnetic field strengths ranging from 2 to 8 T, at frequencies from 82 to 125 and 190 to 230 GHz, and at a temperature of 15 K. Analysis of the frequency-field diagrams derived from all Mueller matrix elements allowed us to differentiate between the effects of electron spin Zeeman splitting and zero-field splitting and to accurately determine the anisotropic Zeeman splitting g-tensor and the zero-field splitting parameters. Our results confirm that Cr3+ ions predominantly substitute into octahedral gallium sites. Line shape analysis of Mueller matrix element spectra using the Bloch-Brillouin model provides the spin volume concentration of Cr3+ sites, showing very good agreement with results from chemical analysis by inductively coupled plasma-optical emission spectroscopy and suggesting minimal occupation of sites with inactive electron paramagnetic resonance. This study enhances our understanding of the magnetic and electronic properties of chromium-doped beta-Ga2O3 and demonstrates the effectiveness of high-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry for characterizing defects in ultrawide-bandgap semiconductors.
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页数:7
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