Exploring Quantum Emission in Bilayer WSe2: Strain Effects from Nanopillars

被引：0

作者：

Singh, Palwinder ^{[1
]}

Wilbur, Grant R. ^{[1
]}

Yeung, Edith ^{[2
,3
]}

Jagde, Jasleen Kaur ^{[1
]}

Jain, Megha ^{[1
,2
]}

Northeast, David B. ^{[2
]}

Mohammed, Seid J. ^{[2
]}

Lapointe, Jean ^{[2
]}

Dalacu, Dan ^{[2
,3
]}

Hall, Kimberley C. ^{[1
]}

机构：

[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 4R2, Canada

[2] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

[3] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2025年 / 262卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

2D materials; photoluminescence mapping; quantum emitters; second-order correlations; SINGLE-PHOTON EMISSION; PHOTOLUMINESCENCE; TRANSITION; EMITTERS; DYNAMICS; EXCITONS; ARRAYS; DEFECT; MOSE2; LAYER;

D O I：

10.1002/pssb.202400616

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

2D semiconductors subject to localized strain represent an emerging, scalable platform for the generation of bright single-photon emitters. In this study, the observation of quantum emission from bilayer (BL) WSe2 under varying 3D strain induced by dielectric nanopillars is reported. Spectrally narrow and bright photoluminescence along with antibunched photon statistics is observed, comparable to those of monolayer WSe2, consistent with strain-mediated quantum emission via defect states. The results indicate that the brightest emitters are created with pillar diameters ranging from 175 to 195 nm. A robust second-order correlation function of g(2)(0) = 0.139 confirms strong antibunching, indicative of high-quality single-photon emission. These findings highlight the potential of using nanopillar arrays to manipulate the electronic states and quantum emission in transition metal dichalcogenide BLs, paving the way for future applications in quantum technologies.

引用

页数：6

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