Correlative behavior between defect generation and ferroelectricity development in Hf0.5Zr0.5O2

被引：0

作者：

Morita, Yukinori ^{[1
]}

Asanuma, Shutaro ^{[1
]}

Ota, Hiroyuki ^{[1
]}

Migita, Shinji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2025年 / 64卷 / 01期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

ferroelectricity; HfZrO; MFM; capacitor; defect; oxygen vacancy;

D O I：

10.35848/1347-4065/ada61a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using electrical measurements and analysis, we investigated the relationship between the generation of defects in pristine Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-metal (MFM) capacitor and their ferroelectricity. Applying a voltage to the HZO MFM capacitor for the first time, its current characteristics showed anomalous features, which differed from the typical ferroelectric characteristics observed in the second voltage application. In our previous research, we proposed the origin of this phenomenon as the generation of electric-field-induced defects in the HZO film, which mediated the current flowing through the MFM capacitor. In the present research, as a result of precise measurements of current-voltage characteristics, it was found that the defect density generated depended on the maximum electric field strength applied to the MFM. Similarly, with increasing defects, the ferroelectricity of the HZO was emphasized. Based on this relationship, we proposed a model in which electric field-induced defect generation initiated ferroelectric transformation in the HZO layer.

引用

页数：6

共 33 条

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