Highly stacked quantum dot mode-locked laser diode with 100 GHz mode spacing

被引：0

作者：

Akahane, Kouichi ^{[1
]}

Matsumoto, Atsushi ^{[1
]}

Yanase, Satoshi ^{[1
,2
]}

Umezawa, Toshimasa ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Maeda, Tomohiro ^{[1
,2
]}

Sotobayashi, Hideyuki ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikitamachi, Koganei, Tokyo 1848795, Japan

[2] Aoyama Gakuin Univ, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2525258, Japan

来源：

2024 IEEE 29TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, ISLC 2024 | 2024年

关键词：

quantum dot; mode-locked laser; strain compensation;

D O I：

10.1109/ISLC57752.2024.10717360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 400-mu m cavity length mode locked laser diode was fabricated with highly stacked quantum dot (QD) structure. Owing to the high density of QD, wide-band lasing with 100 GHz mode spacing was observed at 1550 nm wavelength range, which can be used for DWDM systems in fiber optic communications.

引用

页数：2