Advances in Protein-Based Resistive Switching Memory: Fundamentals, Challenges, and Applications

被引:3
作者
Banik, Hritinava [1 ]
Sarkar, Surajit [2 ]
Deb, Rahul [1 ]
Bhattacharjee, Debajyoti [1 ]
Hussain, Syed Arshad [1 ]
机构
[1] Tripura Univ, Dept Phys, Thin Film & Nanosci Lab, Suryamaninagar 799022, Tripura, India
[2] Dhamma Dipa Int Buddhist Univ, Sch Sci, Dept Phys, Sabroom 799145, Tripura, India
关键词
Protein; Resistive switching; Biocompatibility; Sustainable memory; Switching mechanism; Implantabledevices; RECOMBINANT AZURIN; ELECTRON-TRANSFER; CROSS-LINKING; SILK FIBROIN; THIN-FILMS; DEVICES; BEHAVIOR; LAYER; PERFORMANCE; KERATIN;
D O I
10.1021/acsaelm.4c02008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The advancement of protein-based resistive switching (RS) memory devices represents a promising leap in memory technology for sustainable and biocompatible electronic applications. Conventional memory devices, relying heavily on semiconductor materials, face challenges such as high-power consumption, scalability limits, and environmental impact. Protein-based RS devices offer an alternative by the exploitation of the inherent properties of proteins, such as structural diversity, biocompatibility, and biodegradability, making them viable for eco-friendly as well as suitable for flexible electronics. This review delves into the fundamentals of protein-based RS devices, detailing the switching mechanisms and classifications. It explores an in-depth account of protein-based RS devices with the diverse protein candidates including albumin, azurin, silk fibroin, ferritin, gelatin, keratin, lysozyme, protamine sulfate, soya protein, etc. to date. It also highlights each protein's unique properties and performance metrics. The review also addresses the primary conduction mechanisms in protein-based RS devices, which are critical to understand switching behaviors and device stability. A comprehensive discussion about the challenges faced by the scientific community in order to incorporate proteins into RS-based memory devices along with strategies for improving performance, such as reducing switching voltage, enhancing retention, and enabling multilevel resistive states, is included. Finally, the review identifies key future directions for protein-based RS memory devices, focusing on scalability, performance optimization, and potential applications in neuromorphic computing, bioelectronics, and implantable devices. This comprehensive review aims to guide future research in developing protein-based RS technologies as an environmentally sustainable and high-performing solution for next-generation memory devices.
引用
收藏
页码:2208 / 2232
页数:25
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