Tuning the thickness of an epitaxial multilayer of graphene on a Ni(111) surface by thermal decomposition of C60

被引:0
作者
Picone, A. [1 ]
Giampietri, A. [1 ]
Capra, M. [1 ]
Finazzi, M. [1 ]
Ciccacci, F. [1 ]
Brambilla, A. [1 ]
机构
[1] Politecn Milan, Dipartimento Fis, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
关键词
Graphene; Fullerene; Scanning Tunneling Microscopy; Auger Electron Spectroscopy; Ni(111); ELECTRONIC-PROPERTIES; C-60; GROWTH; INTERCALATION;
D O I
10.1016/j.apsusc.2025.162681
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Obtaining high-quality multilayer graphene (graphite) interfaced with a ferromagnetic substrate is an important step for applications in electronic and spintronic devices. The standard chemical vapour deposition (CVD) technique has been used to grow single and multilayer graphene films, but achieving large single-crystal graphite samples with a tailored number of layers is still challenging. Here, we show that the deposition of fullerene (C60) on a Ni(111) surface pre-covered by graphene, followed by annealing at about 300 degrees C, results in the stabilization of an epitaxial graphite film. Moreover, it is possible to tune the thickness of the graphite film by adjusting the amount of deposited C60. Auger Electron Spectroscopy (AES) indicates the presence of sp2 bonded carbon atoms, while Low Energy Electron Diffraction (LEED) reveals that multilayer graphene is crystalline and in registry with the Ni(111) hexagonal lattice. Finally, Scanning Tunneling Microscopy (STM) images indicate an atomically flat surface, revealing the presence of moire<acute accent> patterns on the topmost graphene layer.
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页数:8
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