Phosphorus-doped carbon nitride for enhanced supercapacitor performance and energy storage applications

被引:0
作者
Subburaj, Surender [1 ,2 ]
Thomas, Shalini [1 ]
Kavipriyah, M. N. [1 ]
Subramanian, Balakumar [1 ]
机构
[1] Univ Madras, Natl Ctr Nanosci & Nanotechnol, Guindy Campus, Chennai, Tamil Nadu, India
[2] Cardiff Univ, Sch Engn, Ctr High Frequency Engn CHFE, Cardiff, Wales
关键词
Carbon nitride; Phosphorus doping; Electrochemical measurements; Specific capacitance; Energy storage; CAPACITANCE PROPERTIES; ELECTRODE MATERIALS; FACILE SYNTHESIS; G-C3N4; NANOSHEETS; EFFICIENT; PHOTOCATALYST; FABRICATION; EVOLUTION;
D O I
10.1016/j.inoche.2024.113266
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Exploiting the advantages of graphitic carbon nitride doped with phosphorus (xP-CN) electrodes were designed for high-performance hybrid asymmetric supercapacitor via facile hydrothermal and thermal decomposition techniques. The structural, surface chemistry, functional and morphological characterizations evidence depict successful phosphorus incorporation in Carbon Nitride (CN). X-ray photoelectron spectroscopy analysis shows that phosphorus (P) atoms have replaced corner carbon atoms in the CN structure. These findings clearly demonstrate that the presence of phosphorus doping improves the electrochemical activity of the electrodes. The designed three-electrode system has a specific capacitance of 189.36 F/g with a current density of 1 A/g. Phosphorus doping has been discovered to play a significant role in improving both specific capacitance and cycling stability. The capacitance retention of the two-electrode solid-state device has 97.2 % after 5000 cycles. These electrochemical evaluations reveal that the xP-CN electrode exhibits superior electrochemical performances than pristine CN. This doping strategy for CN presents a novel and efficient approach for crafting highperformance supercapacitors.
引用
收藏
页数:13
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