A two-dimensional AlN/Zr2CO2 heterojunction with favorable photocurrent and carrier mobility

被引：28

作者：

Gao, Xin ^{[1
]}

Cui, Zhen ^{[1
,2
]}

Wu, Pengfei ^{[1
]}

机构：

[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China

[2] Xian Univ Technol, Xian Key Lab Wireless Opt Commun & Network Res, Xian 710048, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2025年 / 1017卷

关键词：

Heterojunction; Carrier mobility; Two-dimensional materials; Photogalvanic effect; Light absorption coefficient; DFT; HYDROGEN EVOLUTION; OPTICAL-PROPERTIES; TRANSITION; MXENES;

D O I：

10.1016/j.jallcom.2025.179127

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The stability, optical properties, carrier mobility, and photonic effects of the AlN/Zr2CO2 heterojunction constructed from monolayers of AlN and Zr2CO2 are calculated using first-principles methods. The AlN/Zr2CO2 heterostructure exhibits a reduced bandgap, which facilitates the excitation of photo-generated electrons. It is classified as a type I indirect bandgap semiconductor and demonstrates strong stability. The carrier mobility in the armchair direction of the AlN/Zr2CO2 heterojunction can reach up to 2312 cm2/Vs. Additionally, the heterojunction exhibits excellent light absorption capabilities, with a maximum absorption coefficient of 4.54 x 10-5 cm-1 across various wavelengths. The photogenerated current (Jph) resulting from the photonic effect can achieve a maximum value of 3.02 a20/photon. These results indicate that the AlN/Zr2CO2 heterojunction holds great promise for applications in photodetectors.

引用

页数：8

共 44 条

[1] Hexagonal AlN: Dimensional-crossover-driven band-gap transition [J].

Bacaksiz, C. ;

Sahin, H. ;

Ozaydin, H. D. ;

Horzum, S. ;

Senger, R. T. ;

Peeters, F. M. .

PHYSICAL REVIEW B, 2015, 91 (08)

[2]

Belinicher V. I., 1980, Soviet Physics - Uspekhi, V23, P199, DOI 10.1070/PU1980v023n03ABEH004703

[3] Mxenes/WSSe heterojunction photodetector with ultrahigh sensitivity and accuracy [J].

Cui, Zhen ;

Wang, Hanxiao ;

Luo, Yi ;

Li, Enling ;

Shen, Yang ;

Qin, Ke ;

Yuan, Pei .

APPLIED SURFACE SCIENCE, 2025, 684

[4] The excellent electrocatalytic HER activity and photogalvanic effect of WS2/Ga2O3 based on Density Functional Theory [J].

Cui, Zhen ;

Wang, Hanxiao ;

Shen, Yang ;

Qin, Ke ;

Yuan, Pei ;

Li, Enling .

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2024, 88 :898-905

[5] High carrier mobility and polarization sensitivity of AlN/Hf2CO2 heterojunction photodetector [J].

Cui, Zhen ;

Gao, Xin ;

Zhang, Shuang ;

Wang, Lu .

CHINESE JOURNAL OF PHYSICS, 2024, 91 :421-431

[6] Tunable dual-broadband terahertz absorber based on vanadium dioxide stacked with multilayer structures [J].

Cui, Zhen ;

Liu, Nan ;

Zhang, Yize ;

Wang, Mingjun .

OPTICS COMMUNICATIONS, 2024, 570

[7] MoSSe/Si9C15 heterojunction photodetectors with ultrahigh photocurrent and carrier mobility [J].

Cui, Zhen ;

Meng, Haotian ;

Zhang, Chunli ;

Zhang, Lin ;

Zhang, Shuang ;

Wang, Lu .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 182

[8] GaN/Sc2CF2 heterostructure photodetector with exceptional polarization sensitivity [J].

Cui, Zhen ;

Zhang, Guoqing ;

Zhang, Shuang ;

Wang, Lu .

MICRO AND NANOSTRUCTURES, 2024, 193

[9] Electronic and optical properties of van der Waals heterostructures of g-GaN and transition metal dichalcogenides [J].

Cui, Zhen ;

Ren, Kai ;

Zhao, Yiming ;

Wang, Xia ;

Shu, Huabing ;

Yu, Jin ;

Tang, Wencheng ;

Sun, Minglei .

APPLIED SURFACE SCIENCE, 2019, 492 :513-519

[10] Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells [J].

Ganichev, SD ;

Ketterl, H ;

Prettl, W ;

Ivchenko, EL ;

Vorobjev, LE .

APPLIED PHYSICS LETTERS, 2000, 77 (20) :3146-3148

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