Ultrathin carbon doped hexagonal boron nitride films for electromagnetic interference shielding in the terahertz region

We have investigated the electromagnetic interference (EMI) shielding efficiency of carbon-doped hexagonal boron nitride (hBN) films in 0.3-1.8 THz regions using transmission-based terahertz time-domain spectroscopy (THz TDS). The hBN films were synthesized on Copper foils by atmospheric pressure chemical vapor deposition (APCVD) utilizing ammonia borane (AB) powder as a precursor. Carbon doping of BN films was achieved by using the intrinsic carbon dissolved in the Copper substrate. The EMI shielding efficiencies and the optical, dielectric, and electrical properties of the films were determined using THz TDS. The Absorbance is much greater than the Reflectance indicating that absorption is the dominant mechanism of shielding in these films. These carbon-doped hBN films show a high EMI shielding effectiveness, with 99.99 % EM radiation blocked. A maximum value of 30 dB and 55 dB at 1.72 THz were observed for films with 4.5 nm and 6.5 nm thicknesses. This is equivalent to shielding efficiency per unit thickness of 6667 dB/mu m mu m and 8460 dB/mu m, mu m, which is among the highest reported for 2D materials.