Influence of implantation and annealing temperatures on the irradiation damage in He2+ion implanted 6H-SiC

被引：0

作者：

Zang, Hang ^{[1
]}

Yu, Heng ^{[1
]}

Wang, Tao ^{[1
]}

Liu, Fang ^{[1
]}

Chen, Chuanhao ^{[1
]}

Zhou, Pingan ^{[1
]}

Shi, Tan ^{[1
]}

He, Huan ^{[1
]}

Liu, Wenbo ^{[1
]}

He, Chaohui ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Shaanxi Key Lab Adv Nucl Energy & Technol, Xian 710049, Shaanxi, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2025年 / 560卷

基金：

中国国家自然科学基金;

关键词：

Implantation temperature; Annealing temperature; 6H-SiC; Irradiation damage; MICROSTRUCTURAL EVOLUTION; SILICON-CARBIDE; HEAVY-ION; HE; RECOVERY; CAVITIES;

D O I：

10.1016/j.nimb.2025.165611

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single crystal 6H-SiC samples were implanted with He2 ions to 5 x 1016 cm- 2 at 400 degrees C and 750 degrees C, and the sample implanted at 400 degrees C was subsequently annealed at 750 degrees C for 3 h in vacuum. These samples were characterized using X-ray diffraction, Raman spectroscopy, UV-Visible spectrophotometry and transmission electron microscopy. The results showed that the lattice expansion, level of disorder and defect concentrations in the He-implanted 6H-SiC has decreased with increasing implantation temperature at the same dose. There was a reduced irradiation effect in the 6H-SiC irradiated at 400 degrees C and subsequently annealed at 750 degrees C compared to the sample solely irradiated at 750 degrees C to the same dose. This behavior was attributed to more stable defect clusters and enhanced He trapping at defects in the latter sample. Possible He bubble effects cannot be excluded. In addition, the temperature effect on defect recovery in the dynamic annealing during irradiation and postirradiation annealing was discussed.

引用

页数：5

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