Electronic, optical, and phonons properties of GaAs1-xPx under the effect of pressure

被引：0

作者：

Elkenany, Elkenany Brens ^{[1
]}

Albargi, Hasan B. ^{[1
,2
]}

Dhahri, R. ^{[1
]}

Al-Syadi, A.M. ^{[1
,2
]}

机构：

[1] Department of Physics, College of Science and Arts, Najran University, Najran, Saudi Arabia

[2] Promising Centre for Sensors and Electronic Devices (PCSED), Advanced Materials and Nano-Research Centre, Najran University, Najran, Saudi Arabia

来源：

Optical and Quantum Electronics | 2025年 / 57卷 / 04期

关键词：

Antimony alloys - Gallium alloys - Gallium arsenide - Gallium phosphide - High pressure effects in solids - High pressure engineering - Optical depth - Phonons - Photoreactivity - Semiconducting gallium arsenide;

D O I：

10.1007/s11082-025-08175-3

中图分类号：

学科分类号：

摘要：

The longitudinal and transversal phonons frequencies (ωLo, ωTo) of GaAs1-xPx alloy were calculated. The electronic properties such as energy band gaps (Eg-L, Eg-Γ, and Eg-X) of GaAs1-xPx have been determined. The optical properties of refractive index (n), optical dielectric constant (Ε∞), and static dielectric constant (Ε0) of GaAs1-xPx were studied. The effect of pressure on the studied properties has been investigated. The empirical pseudopotential approach (EPM) with virtual crystal approximation (VCA) was used in our calculations. We have determined the pressure transition points from direct to indirect semiconductors for different compositions of the studied alloy. The phonon frequency modes were increased by increasing pressure. Our results are compatible with available experimental data for the electronic, optical, and phonon properties. The calculated results display that the alloy under investigation can be used in optoelectronic applications under high pressure. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.

引用