Dark current suppression of very long-wavelength p-on-n HgCdTe infrared detectors via optimizing absorber layer carrier concentration

被引：1

作者：

Li, Xun ^{[1
]}

Wang, Xi ^{[1
]}

Xie, Xiaohui ^{[1
]}

Sun, Quanzhi ^{[1
]}

Zhou, Songmin ^{[1
]}

Gan, Zhikai ^{[1
]}

Zhu, Liqi ^{[1
]}

Wei, Yanfeng ^{[1
]}

Lin, Chun ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Detect Technol, Shanghai 200083, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2025年 / 147卷

基金：

中国国家自然科学基金;

关键词：

Infrared detector; HgCdTe; Very long-wavelength; Dark current; MBE HGCDTE; LIFETIMES;

D O I：

10.1016/j.infrared.2025.105769

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this study, the very long-wavelength (VLW) p-on-n HgCdTe devices with different absorber layer carrier concentration are fabricated and their dark current density versus voltage (J-V) characteristics are analyzed. The results show that suppression tunneling current is of great significance for VLW device, and reducing absorber layer carrier concentration is an feasible method. The influences of carrier concentration on dark current density are discussed further, considering the dependence of minority carrier lifetime on carrier concentration. It is found that the tunneling current and generation-recombination current are the dominant dark current mechanism respectively when the absorber layer carrier concentration is above and below 1.0 x 1015 cm-3. The experiment and simulation results indicate that the n-type absorber layer with carrier concentration below 1.0 x 1015 cm-3 and high Shockley-Read-Hall (SRH) lifetime is beneficial for the preparation of low dark current VLW p-on-n HgCdTe devices.

引用

页数：8

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