Impact of Interface Trap Charges on the Performance and Reliability of Heterojunction Hetero Dielectric Vertical Non-Uniform Channel Double Gate TFET

We examined the influence of interface trap charges on the performance of the source pocket heterojunction hetero dielectric vertical non-uniform channel double gate tunnel field- effect transistor (SP-HJ-HD-VNUCDG-TFET). Specifically, the effect of donor and acceptor traps on the analog/RF performance of the device was investigated. The SP-HJ-HD-VNUCDG-TFET was designed to improve the drive current of the TFET. The results of the proposed device are compared with a source pocket heterojunction vertical non-uniform channel double gate TFET (SP-HJ-VNUCDG-TFET). Several figures of merit, including cutoff frequency fT, gain bandwidth product, and the transconductance frequency product are analysed and, based on the simulation results, it appears that the SP-HJ-HD-VNUCDG-TFET is more suitable for low power switching applications compared to the SP-HJ-VNUCDG-TFET because performance of SP-HJ-HD-VNUCDG-TFET is less affected by the interface trap charges.