Energy-Efficient Near-Sensor Event Detector based on Multilevel Ga2O3 RRAM

被引：0
|
作者：
Morsali, Mehrdad [1 ]
Tabrizchi, Sepehr [2 ]
Velpula, Ravi Teja [3 ]
Muthu, Mano Bala Sankar [3 ]
Hieu Pham Trung Nguyen [3 ]
Imani, Mohsen [4 ]
Roohi, Arman [2 ]
Angizi, Shaahin [1 ]
机构：
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA
[2] Univ Nebraska, Sch Comp, Lincoln, NE USA
[3] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
[4] Univ Calif Irvine, Dept Comp Sci, Irvine, CA USA
来源：
2024 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, ISVLSI | 2024年
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/ISVLSI61997.2024.00067
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a cost-effective Near-Sensor Processing (NSP) platform is developed based on an experimentally-measured Ti/TiN/Ga2O3/Ti/Pt Resistive Random Access Memory (RRAM) device that facilitates event detection for edge vision sensors without the requirement for power-intensive Analog-to-Digital Converters (ADCs). The platform is supported with a hardware-friendly background comparison technique providing adjustable precision that allows for a dynamic balance between accuracy and efficiency at runtime. Our device-to-architecture simulation results demonstrate that the proposed platform achieves on average 66% and 63% energy saving over STT-MRAM and SOT-MRAM counterparts due to utilizing the ADC-less method.
引用
收藏
页码：331 / 336
页数：6
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