Multiparameter Admittance Spectroscopy for Investigating Defects in MoS2 Thin-Film MOSFETs

被引：0

作者：

Reato, Eros ^{[1
]}

Esteki, Ardeshir ^{[1
]}

Ku, Benny ^{[1
,2
]}

Wang, Zhenxing ^{[1
,2
]}

Heuken, Michael ^{[3
]}

Lemme, Max C. ^{[1
,2
]}

Engstroem, Olof ^{[2
]}

机构：

[1] Rhein Westfal TH Aachen, Chair Elect Devices, D-52074 Aachen, Germany

[2] AMO GmbH, D-52074 Aachen, Germany

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 03期

关键词：

Logic gates; Electrons; Surface impedance; MOSFET; Surface morphology; Voltage measurement; Voltage; Substrates; Schottky barriers; Nickel; Conductance method; electron traps; molybdenum disulfide (MoS2) field-effect transistor (FET); multiparameter admittance spectroscopy (MPAS); thin-film metal-oxide-semiconductor field-effect transistors (MOSFETs); HYSTERESIS; DENSITY; GROWTH;

D O I：

10.1109/TED.2025.3527413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a method for assessing the quality of electronic material properties of thin-film metal-oxide-semiconductor field-effect transistors (MOSFETs). By investigating samples with metal-organic-chemical-vapor-deposition (MOCVD)-grown molybdenum disulfide (MoS2) channels exposed to atmospheric conditions, we reveal the existence of electron traps in MoS2 and at the interface between the gate insulator and the thin-film MoS2. Differential conductance and capacitance data of the transistor channels are plotted as 3-D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.

引用

页码：1506 / 1513

页数：8

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