A 1.2-V compact Bandgap Reference with Curvature Compensation technology

被引：0
作者：
Yan, Zhenjie
Zhang, Binhan
Yang, Rui
Zheng, Yi
Li, Jinghu [1 ,2 ]
Luo, Zhicong [1 ]
Sun, Qiyan [1 ]
机构：
[1] Fujian Agr & Forestry Univ, Fuzhou 350002, Peoples R China
[2] Xiamen Eochip Seiconductor Co Ltd, Xiamen 361009, Peoples R China
来源：
IEICE ELECTRONICS EXPRESS | 2025年 / 22卷 / 07期
关键词：
Sub-threshold; curvature compensation; low-area; and bandgap reference voltage; VOLTAGE REFERENCE; CMOS; TEMPERATURE; NOISE;
D O I：
10.1587/elex.22.20250028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-area and low-temperature-coefficient (TC) bandgap reference (BGR) circuit using curvature compensation technology is presented. Comparing with traditional BGR with multiple BJT, four MOSFETs biased in their weak-inversion regions can produce a proportionalto-absolute-temperature (PTAT) voltage without consuming a great active area. In addition, a curvature compensation circuit was adopted to reduce the drift of temperature. The proposed BGR circuit has been implemented using a 0.18um technology, occupying an area of 0.01 mm2.Simulation results demonstrate that the BGR achieves average TC of 7.86ppm/degrees C from -40 degrees C to 125 degrees C at 3.3 V and the line regulation (LR) of 0.048%/V between 2.7 and 3.6 V supply voltage, respectively.
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页数：6
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