2D Van Der Waals Ferroelectric Materials and Devices for Neuromorphic Computing

被引:0
|
作者
Wen, Zhixing [1 ,2 ]
Chen, Jiangang [1 ]
Zhang, Qirui [1 ]
Wang, Ge [1 ]
Wang, Xuemei [1 ]
Yang, Fan [1 ]
Liu, Qing [1 ]
Luo, Xiao [1 ]
Liu, Fucai [1 ,3 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 611731, Peoples R China
[2] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
2D Materials; ferroelectrics; field-effect transistor; neuromorphic computing; synaptic device; ROOM-TEMPERATURE FERROELECTRICITY; NEURAL REUSE; MEMORY; PIEZOELECTRICITY; TRANSITION; SUPERLUBRICITY; POLARIZATION; TRANSISTORS; MEMRISTOR; NETWORKS;
D O I
10.1002/smll.202412761
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D van der Waals (vdW) ferroelectric materials are emerging as transformative components in modern electronics and neuromorphic computing. The atomic-scale thickness, coupled with robust ferroelectric properties and seamless integration into vdW engineering, offers unprecedented opportunities for the development of high-performance and low-power devices. Notably, 2D ferroelectric devices excel in enabling multistate storage and neuromorphic functionalities in emulating synapses or retinas, positioning them as prime candidates for next-generation in-sensor-and-memory units. Despite ongoing challenges such as scalability, material stability, and uniformity, rapid interdisciplinary advancements and advancing nanofabrication processes are driving the field forward. This review delves into the fundamental principles of 2D ferroelectricity, highlights typical materials, and examines key device structures along with their applications in non-von Neumann architecture development and neuromorphic computing. By providing an in-depth overview, this work underscores the potential of 2D ferroelectric materials to revolutionize the future of electronics.
引用
收藏
页数:25
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