Temperature-dependent electrical transport in InSe layered semiconductor

被引：0

作者：

Wu, Chia-Ti ^{[1
]}

Lee, Yueh-Chien ^{[2
]}

Chen, Ruei-San ^{[3
]}

机构：

[1] Natl Kaohsiung Univ Sci & Technol, Dept Telecommun Engn, Kaohsiung, Taiwan

[2] Lunghwa Univ Sci & Technol, Dept Elect Engn, Taoyuan, Taiwan

[3] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei, Taiwan

来源：

PHYSICA B-CONDENSED MATTER | 2025年 / 707卷

关键词：

Indium selenide; Variable range hopping; Small polaron hopping; CONDUCTION;

D O I：

10.1016/j.physb.2025.417190

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this presented study, the charge transfer behavior in InSe has been investigated by current-voltage (I-V) curve as a function of temperature. The electrical resistivity is independent of temperature in the range of 30-80 K and decreases with increasing temperature from 80 to 300 K, exhibiting the typical semiconducting nature. It is clear that the decreasing rate of the resistivity is slower and faster in the temperature range of 80-170 K and 170-300 K, respectively. The discussions are shown that the transport mechanism from 80 to 170 K can be described the variable range hopping (VRH) model and tends to the adiabatic small polaron hopping (SPH) model above 170 K.

引用

页数：5

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