Temperature-dependent electrical transport in InSe layered semiconductor

In this presented study, the charge transfer behavior in InSe has been investigated by current-voltage (I-V) curve as a function of temperature. The electrical resistivity is independent of temperature in the range of 30-80 K and decreases with increasing temperature from 80 to 300 K, exhibiting the typical semiconducting nature. It is clear that the decreasing rate of the resistivity is slower and faster in the temperature range of 80-170 K and 170-300 K, respectively. The discussions are shown that the transport mechanism from 80 to 170 K can be described the variable range hopping (VRH) model and tends to the adiabatic small polaron hopping (SPH) model above 170 K.