A Low-Power and Low-Noise 4-12 GHz Buck CMOS Low-Noise Amplifier with Current-Reused Technique

被引:0
作者
Liu, Jian [1 ]
Li, Li [1 ]
机构
[1] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou, Guangdong, Peoples R China
来源
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 2025年 / 55卷 / 01期
关键词
low-noise amplifier (LNA); noise figure (NF); Current-reused; CMOS; WIDE-BAND LNA; GAIN;
D O I
10.33180/InfMIDEM2025.106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a wideband fully integrated low-power and low-noise amplifier (LNA) is presented. It features an 8 GHz (from 4 GHz to 12 GHz) bandwidth and an excellent noise figure (NF) using 65 nm CMOS technology. This LNA was designed utilizing a current-reused technique and a cascode gain boost technique. In addition, the interstage inductors use series peaking to reduce the roll-off of high frequency gain and achieve high broadband gain.The proposed LNA circuit achieved high and flat power gain of 23.5 +/- 1 dB with input return loss less than-8 dB within the bandwidth of interest (4-12 GHz).The flat NF is 3.3 +/- 0.5 dB and the NFmin is a staggering 2.8 dB. Achieving the above performance, the third-order input point (IIP3) also reached-10.78 dBm, which is considered excellent. The LNA consumes 6.07 mW from a 1.2 V supply and occupies a layout area of 0.53x0.55 mm2.
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页数:78
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