Energy gap and orbital mixing in DNTT/PTCDI-C8 heterostructure

被引：0

作者：

Kim, Yeo Eun ^{[1
]}

Jung, Haeji ^{[2
]}

Park, Joon Hyung ^{[1
]}

Yoo, Hocheon ^{[1
]}

Kim, Chang-Hyun ^{[3
]}

机构：

[1] Gachon Univ, Dept Semicond Engn, Seongnam 13120, South Korea

[2] Gachon Univ, Dept Elect Engn, Seongnam 13120, South Korea

[3] Univ Ottawa, Sch Elect Engn & Comp Sci, Ottawa, ON K1N 6N5, Canada

来源：

ORGANIC ELECTRONICS | 2025年 / 138卷

基金：

加拿大自然科学与工程研究理事会; 新加坡国家研究基金会;

关键词：

Organic semiconductors; DNTT; PTCDI-C8; Heterostructure; Thin-film transistors; FIELD-EFFECT TRANSISTORS;

D O I：

10.1016/j.orgel.2025.107195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organic pn heterostructures are widely employed in emerging devices. However, charge carrier behavior in these structures is not well understood, posing a difficulty in designing and optimizing devices in a systematic manner. In this article, finite-element simulation is used to reproduce and rationalize transfer characteristics of a thin-film transistor fabricated with DNTT/PTCDI-C8 heterostructure. Introducing the concept of orbital mixing enables a fit to the experimental data, providing insights into the role of energetic, transport, and interface parameters. Spatial distribution of charge carriers and electric potential inside the semiconductor channel suggests that the device performance is strongly affected by energetic barriers formed at metal/organic and organic/organic interfaces. Finally, the importance of discretization is illustrated by creating different meshes and analyzing their impact on simulated transfer characteristics.

引用

页数：7