Effect of Y3+/Yb3+ Co-Doping on the Structural, Optical, and Morphological Properties of Silicon Nanowires for Optoelectronic Application

In order to enhance the performance of silicon in optoelectronic applications, it is crucial to improve its optical and morphological properties. This study focuses on the use of silicon nanowires (SiNWs) co-doped with Y3+ and Yb3+ to achieve this objective. Silicon nanowires (SiNWs) were grown directly from n-(100) single crystal silicon through a silver-assisted electrochemical etching method, all conducted at room temperature. SiNWs co-doped with Y3+ and Yb3+ were prepared by spin coating method. The morphology, microstructure, and the photoluminescence properties of the samples were characterized and analyzed. Energy dispersive X-ray (EDX) analysis confirms the chemical composition of the SiNWs doped with (Y3+, Yb3+), and proves the effective introduction of dopant elements into the SiNWs host lattice. The X-ray diffraction (XRD) analysis indicates the formation of the crystalline phases of YbSi, and YbYSi. SEM micrographs display arrays of parallel nanowires, each with an average length of approximately 39 mu m following a 90 min process. PL characterization of Yb3+ and Yb3+/Y3+ is performed through emission spectra. An intense Near Infra-Red PL emission was observed from the Yb3+, and this emission was improved with Yb3+/Y3+ co-doped. The excitation wavelength is 980 nm.