Enhanced cooling model for GaN HEMT based on thermoelectric cooler

The self-heating effect of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) limits their performance. This work presents an enhanced cooling model based on thermoelectric coolers (TECs), utilizing both theoretical and experimental methods to improve the thermal management of GaN HEMTs. Results indicate a significant temperature reduction compared to conventional cooling methods, with a considerable increase in drain current by 11.2 % and 15.6 % compared to air and liquid cooling, respectively. At maximum dissipation power, the optimal current for air cooling with TEC is 9 A, and 11 A for liquid cooling with TEC. By adjusting the TEC input current, a maximum junction temperature difference of approximately 10.3 degrees C and 16.6 degrees C is achieved, resulting in optimized junction temperature of 176.3 degrees C and 158.3 degrees C respectively, both of which are further validated experimentally. In addition, further theoretical analysis reveals that the structure and parameters of thermoelectric (TE) materials significantly impact the junction temperature of GaN HEMTs. When L = 0.4 mm and S p- S n = 458.2 mu V/K, the junction temperature can be further reduced to 141.1 degrees C and 134.4 degrees C respectively. These findings provide valuable guidance for the design and optimization of thermal management for GaN HEMTs using TECs.