A Study on Short Circuit Characteristics of 4H-SiC MOSFET Coupled With Electron Irradiation

被引：0
作者：
Chen, Yan [1 ,2 ]
Bai, Yun [1 ]
Wang, Antao [1 ,2 ]
Qiu, Leshan [1 ,2 ]
Ding, Jieqin [3 ]
Tang, Yidan [1 ]
Tian, Xiaoli [1 ]
Hao, Jilong [1 ,3 ]
Li, Xuan [1 ]
Liu, Xinyu [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
[3] Zhuzhou CRRC Times Semicond Co Ltd, State Key Lab Adv Power Semicond Device, Zhuzhou 412001, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2025年 / 72卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Radiation effects; Electrons; MOSFET; Logic gates; Annealing; Silicon carbide; Tunneling; Charge carrier lifetime; Couplings; Threshold voltage; 4H-silicon carbide (SiC); coupling effects; electron irradiation; short circuit (SC) characteristics; SIC MOSFETS; RELIABILITY; ROBUSTNESS; IMPACT;
D O I：
10.1109/TED.2024.3508660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, the electron irradiation coupling short circuit (SC) characteristics of 4H-silicon carbide (SiC) MOSFET are studied. The SC influence mechanism of electron irradiation coupling is proposed, and the influence of minority carrier lifetime on the SC characteristics of the device after irradiation is further studied. The 4H-SiC MOSFET and 4H-SiC wafer are irradiated by 2-MeV electrons. The changes in static parameters of 4H-SiC MOSFET are analyzed, and the SC characteristics of 4H-SiC MOSFET under electron irradiation coupling are studied by the limit SC (LSC) test method. The results show that after irradiation, the SC peak current of 4H-SiC MOSFET increases by 9.6%, the critical SC failure time (t(crit)) decreases by 10.85%, and the critical SC failure energy (E-crit) decreases by 5.29%. MOSFET's LSC failure mechanism after electron irradiation is parasitic BJT conduction. Through TCAD simulation and theoretical derivation, it is proved that the increase of the base current is the main cause of parasitic BJT conduction, and the decrease of carrier lifetime will trigger parasitic BJT conduction earlier. The minority carrier lifetime can be reduced by 97% after electron irradiation. The influence mechanism of electron irradiation on SC characteristics is verified by TCAD simulation. The total ion dose effect will increase the SC peak current, and the displacement effect will significantly reduce the minority carrier lifetime, thus reducing the SC capacity of the device. The simulation results are consistent with the experimental results.
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收藏
页码：323 / 330
页数：8
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