III-V semiconductor wires for optical switches in solid-state lasers

被引:0
作者
Qiu, Linlu [1 ]
Zhao, Yifan [2 ]
Jiang, Jieyu [1 ]
Lou, Fei [1 ]
Zhang, Shuaiyi [1 ]
Yang, He [2 ]
Zhang, Baitao [3 ]
Wang, Xia [1 ,4 ]
He, Jingliang [3 ]
机构
[1] Qingdao Univ Sci & Technol, Shandong Engn Res Ctr New Optoelect Informat Techn, Sch Math & Phys, Qingdao 266061, Peoples R China
[2] Beihang Univ, Sch Instrumentat & Optoelect Engn, Beijing 100191, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[4] Univ Jinan, Sch Phys & Technol, Jinan 250022, Peoples R China
基金
中国国家自然科学基金;
关键词
ULTRAFAST CARRIER DYNAMICS; NANOWIRE SOLAR-CELLS; THERMAL-CONDUCTIVITY; SATURABLE ABSORBER; ELECTROMECHANICAL PROPERTIES; ELECTRONIC-PROPERTIES; GRAPHENE PHOTONICS; GAAS; INAS; ABSORPTION;
D O I
10.1039/d4tc04975f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Micro-/nano-materials have remarkably attracted research attention over the past two decades due to their unique structure-dependent optoelectronic properties. Particularly, semiconductor wires (SWs) have become fundamental materials for photonic devices owing to their inherent confinement effects as linear structures. Their electrical and optical properties can be altered by controlling their diameter, strain and composition, providing a unique platform for studying light generation, amplification, propagation, detection and modulation. This work reviews recent developments of III-V SWs as optical switches in bulk laser applications. The structural characteristics of III-V SWs for optical switch applications are introduced, followed by a discussion on the nonlinear optical properties of various SWs and their applications in solid-state lasers (SSLs). The influence of strain and diameter on the properties of SWs is summarized, along with the effects of morphology on the thermal conductivity of these wires. Finally, the challenges that lie ahead in this field are presented. Future research efforts are needed to further optimise the growth techniques of SWs, achieving precise control over their size and composition to tune their optoelectronic performance. Additionally, systematic studies on the strain effects and structural defects in SWs of different diameters will help maximise their performance in practical applications.
引用
收藏
页码:3669 / 3688
页数:20
相关论文
共 176 条
[1]   Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization [J].
Alanis, Juan Arturo ;
Chen, Qian ;
Lysevych, Mykhaylo ;
Burgess, Tim ;
Li, Li ;
Liu, Zhu ;
Tan, Hark Hoe ;
Jagadish, Chennupati ;
Parkinson, Patrick .
NANOSCALE ADVANCES, 2019, 1 (11) :4393-4397
[2]   Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells [J].
Alcer, David ;
Tirrito, Matteo ;
Hrachowina, Lukas ;
Borgstrom, Magnus T. .
ACS APPLIED NANO MATERIALS, 2024, 7 (02) :2352-2358
[3]   Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell [J].
Alekseev, Prokhor A. ;
Sharov, Vladislav A. ;
Borodin, Bogdan R. ;
Dunaevskiy, Mikhail S. ;
Reznik, Rodion R. ;
Cirlin, George E. .
MICROMACHINES, 2020, 11 (06) :1-13
[4]   Strain engineering of ZnO thermal conductivity [J].
Antonio Seijas-Bellido, Juan ;
Rurali, Riccardo ;
Iniguez, Jorge ;
Colombo, Luciano ;
Melis, Claudio .
PHYSICAL REVIEW MATERIALS, 2019, 3 (06)
[5]   Recent advances in the Van der Waals epitaxy growth of III-V semiconductor nanowires on graphene [J].
Anyebe, Ezekiel Anyebe ;
Kesaria, Manoj .
NANO SELECT, 2021, 2 (04) :688-711
[6]   High electron mobility in strained GaAs nanowires [J].
Balaghi, Leila ;
Shan, Si ;
Fotev, Ivan ;
Moebus, Finn ;
Rana, Rakesh ;
Venanzi, Tommaso ;
Hubner, Rene ;
Mikolajick, Thomas ;
Schneider, Harald ;
Helm, Manfred ;
Pashkin, Alexej ;
Dimakis, Emmanouil .
NATURE COMMUNICATIONS, 2021, 12 (01)
[7]   Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch [J].
Balaghig, Leila ;
Bussone, Genziana ;
Grifone, Raphael ;
Huebner, Rene ;
Grenzer, Joerg ;
Ghorbani-Asl, Mahdi ;
Krasheninnikov, Arkady, V ;
Schneider, Harald ;
Helm, Manfred ;
Dimakis, Emmanouil .
NATURE COMMUNICATIONS, 2019, 10 (1)
[8]   Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices [J].
Bao, Qiaoliang ;
Loh, Kian Ping .
ACS NANO, 2012, 6 (05) :3677-3694
[9]   Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers [J].
Bao, Qiaoliang ;
Zhang, Han ;
Wang, Yu ;
Ni, Zhenhua ;
Yan, Yongli ;
Shen, Ze Xiang ;
Loh, Kian Ping ;
Tang, Ding Yuan .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (19) :3077-3083
[10]   Synthesis and Applications of III-V Nanowires [J].
Barrigon, Enrique ;
Heurlin, Magnus ;
Bi, Zhaoxia ;
Monemar, Bo ;
Samuelson, Lars .
CHEMICAL REVIEWS, 2019, 119 (15) :9170-9220