High-Performance Zinc-Lead Alloy Green Quasi-2D Perovskite Light-Emitting Diodes

被引:1
作者
Zhong, Guangchuan [1 ]
Yuan, Guoqiang [1 ]
Li, Boyang [1 ]
Qiu, Langwen [1 ]
Zhang, Yan [1 ]
Sun, Guanwei [2 ]
Chen, Zhao [1 ]
Meng, Fanyuan [1 ]
Su, Shi-Jian [2 ]
机构
[1] Wuyi Univ, Sch Appl Phys & Mat, Jiangmen 529020, Peoples R China
[2] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Wushan Rd 381, Guangzhou 510640, Peoples R China
来源
ADVANCED OPTICAL MATERIALS | 2025年 / 13卷 / 07期
基金
中国国家自然科学基金;
关键词
additive engineering; green light-emitting diodes; lead toxicity; quasi-2D perovskites; zinc-lead alloy; NANOCRYSTALS;
D O I
10.1002/adom.202402360
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead-based perovskite light-emitting diodes (PeLEDs) is gaining significant attention for their outstanding optoelectronic properties. However, the intrinsic lead toxicity in these materials presents serious environmental and health risks, limiting their further development. Here, highly efficient zinc-lead alloy quasi-2D perovskites are developed through Zn2+ substitution and additive engineering. The Zn2+ substitution improves tolerance factors, increases radiative recombination rates, and suppresses nonradiative recombination, thereby enhancing stability. Additionally, [bis(4-methoxyphenyl) phosphinyloxy]carbamic acid tert-butyl ester (BPCA) additive effectively passivates bromine vacancy defects and improves film quality. The successful Zn2+ substitution and additive passivation strategy results in a significantly increased photoluminescence quantum yield from 4.3 to 85.6%. Consequently, high-performance zinc-lead alloy green PeLEDs are achieved with a maximum current efficiency of 54.35 cd A-1 and a peak external quantum efficiency of 22.49%, representing the highest performance among green PeLEDs with partial lead substitution. Moreover, the T50 lifetime of Zn-Lead alloy PeLEDs is approximate to 8.9 times longer than that of the pristine PeLEDs. The approach not only mitigates lead toxicity but also improves device efficiency and stability, representing a significant advancement toward safer and more sustainable perovskite-based optoelectronic devices.
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页数:9
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