Principles and Applications of Two-Dimensional Semiconductor Material Devices for Reconfigurable Electronics

被引:0
作者
Pan, Jiong [1 ,2 ]
Zhang, Yike [3 ]
Yin, Jiaju [1 ,2 ]
Guo, Pengwen [1 ,2 ]
Yang, Yi [1 ,2 ]
Ren, Tian-Ling [1 ,2 ]
机构
[1] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Beijing 100084, Peoples R China
[3] Tsinghua Univ, WeiYang Coll, Beijing 100084, Peoples R China
关键词
two-dimensional materials; two-dimensional semiconductors; reconfigurable electronics; reconfigurable logic; artificial intelligence; FIELD-EFFECT TRANSISTORS; FLOATING-GATE;
D O I
10.3390/nano15030201
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
With the advances in edge computing and artificial intelligence, the demands of multifunctional electronics with large area efficiency are increased. As the scaling down of the conventional transistor is restricted by physical limits, reconfigurable electronics are developed to promote the functional integration of integrated circuits. Reconfigurable electronics refer to electronics with switchable functionalities, including reconfigurable logic operation functionalities and reconfigurable responses to electrical or optical signals. Reconfigurable electronics integrate data-processing capabilities with reduced size. Two-dimensional (2D) semiconductor materials exhibit excellent modulation capabilities through electrical and optical signals, and structural designs of 2D material devices achieve versatile and switchable functionalities. 2D semiconductors have great potential to develop advanced reconfigurable electronics. Recent years witnessed the rapid development of 2D material devices for reconfigurable electronics. This work focuses on the working principles of 2D material devices used for reconfigurable electronics, discusses applications of 2D-material-based reconfigurable electronics in logic operation and artificial intelligence, and further provides a future outlook for the development of reconfigurable electronics based on 2D material devices.
引用
收藏
页数:21
相关论文
共 104 条
[1]   Introducing 2D-FETs in Device Scaling Roadmap using DTCO [J].
Ahmed, Z. ;
Afzalian, A. ;
Schram, T. ;
Jang, D. ;
Verreck, D. ;
Smets, Q. ;
Schuddinck, P. ;
Chehab, B. ;
Sutar, S. ;
Arutchelvan, G. ;
Soussou, A. ;
Asselberghs, I ;
Spessot, A. ;
Radu, I. P. ;
Parvais, B. ;
Ryckaert, J. ;
Na, M. H. .
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
[2]   Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab [J].
Asselberghs, I ;
Smets, Q. ;
Schram, T. ;
Groven, B. ;
Verreck, D. ;
Afzalian, A. ;
Arutchelvan, G. ;
Gaur, A. ;
Cott, D. ;
Maurice, T. ;
Brems, S. ;
Kennes, K. ;
Phommahaxay, A. ;
Dupuy, E. ;
Radisic, D. ;
De Marneffe, J-F ;
Thiam, A. ;
Li, W. ;
Devriendt, K. ;
Huyghebaert, C. ;
Lin, D. ;
Caymax, M. ;
Morin, P. ;
Radu, I. P. .
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
[3]   2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory [J].
Bach, Thi Phuong Anh ;
Cho, Sangeun ;
Kim, Hyungsang ;
Nguyen, Duc Anh ;
Im, Hyunsik .
ACS NANO, 2024, 18 (05) :4131-4139
[4]   A roadmap for electronic grade 2D materials [J].
Briggs, Natalie ;
Subramanian, Shruti ;
Lin, Zhong ;
Li, Xufan ;
Zhang, Xiaotian ;
Zhang, Kehao ;
Xiao, Kai ;
Geohegan, David ;
Wallace, Robert ;
Chen, Long-Qing ;
Terrones, Mauricio ;
Ebrahimi, Aida ;
Das, Saptarshi ;
Redwing, Joan ;
Hinkle, Christopher ;
Momeni, Kasra ;
van Duin, Adri ;
Crespi, Vin ;
Kar, Swastik ;
Robinson, Joshua A. .
2D MATERIALS, 2019, 6 (02)
[5]   Electrically Dynamic Configurable WSe2 Transistor and the Applications in Photodetector [J].
Bu, Tong ;
Duan, Xinpei ;
Liu, Chang ;
Su, Wanhan ;
Hong, Xitong ;
Hong, Ruohao ;
Zhou, Xinjie ;
Liu, Yuan ;
Fan, Zhiyong ;
Zou, Xuming ;
Liao, Lei ;
Liu, Xingqiang .
ADVANCED FUNCTIONAL MATERIALS, 2023, 33 (48)
[6]   The future transistors [J].
Cao, Wei ;
Bu, Huiming ;
Vinet, Maud ;
Cao, Min ;
Takagi, Shinichi ;
Hwang, Sungwoo ;
Ghani, Tahir ;
Banerjee, Kaustav .
NATURE, 2023, 620 (7974) :501-515
[7]   Atomic Vacancies in Transition Metal Dichalcogenides: Properties, Fabrication, and Limits [J].
Cavallini, Massimiliano ;
Gentili, Denis .
CHEMPLUSCHEM, 2022, 87 (03)
[8]   Logic gates based on neuristors made from two-dimensional materials [J].
Chen, Huawei ;
Xue, Xiaoyong ;
Liu, Chunsen ;
Fang, Jinbei ;
Wang, Zhen ;
Wang, Jianlu ;
Zhang, David Wei ;
Hu, Weida ;
Zhou, Peng .
NATURE ELECTRONICS, 2021, 4 (06) :399-404
[9]   Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors [J].
Chen, Li ;
Li, Si ;
Feng, Xuewei ;
Wang, Lin ;
Huang, Xin ;
Tee, Benjamin C. -K. ;
Ang, Kah-Wee .
ADVANCED ELECTRONIC MATERIALS, 2018, 4 (09)
[10]   A FinFET with one atomic layer channel [J].
Chen, Mao-Lin ;
Sun, Xingdan ;
Liu, Hang ;
Wang, Hanwen ;
Zhu, Qianbing ;
Wang, Shasha ;
Du, Haifeng ;
Dong, Baojuan ;
Zhang, Jing ;
Sun, Yun ;
Qiu, Song ;
Alava, Thomas ;
Liu, Song ;
Sun, Dong-Ming ;
Han, Zheng .
NATURE COMMUNICATIONS, 2020, 11 (01)