High performance 640 x 512 long-wavelength superlattice infrared focal plane array detector based on InAs substrate

被引：0

作者：

Jiang, Zhi ^{[1
]}

Zhou, Xu-chang ^{[1
]}

Peng, Qiu-si ^{[1
]}

Lei, Xiao-hong ^{[1
]}

Yang, Chun-zhang ^{[1
]}

Duan, Bi-wen ^{[1
]}

Wang, Hai-peng ^{[1
]}

Deng, Gong-rong ^{[1
]}

Li, Yan-hui ^{[1
]}

Kong, Jin-cheng ^{[1
]}

机构：

[1] Kunming Inst Phys, Kunming 650223, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2025年 / 145卷

关键词：

InAs-based; Type-II superlattice; MBE growth; Long-wavelength Infrared detector; PHOTODIODES; GROWTH; OPTIMIZATION;

D O I：

10.1016/j.infrared.2025.105734

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Long-wavelength infrared (LWIR) type-II superlattice (T2SL) photodetector with a double barrier structure and n-type absorber is developed on InAs substrates. The epi-layer of the detector with this structure has a flat surface and excellent crystal quality. The dark current density of the single-diodes remains below 1 x 10-4 A/cm-2 within the bias range of- 0.1-- 0.5 V at 77 K. Due to the low dark current density, focal plane arrays (FPAs) are fabricated and evaluated. The FPA has a format of 640 x 512 with a pixel pitch of 15 mu m, and exhibit a 50 % cutoff wavelength of 9.3 mu m. The noise equivalent temperature difference (NETD) and operability are 20 mK and 99.6 % respectively under an optical aperture of F/2.0 and an integration time of 700 mu s at 77 K, at the same time, the response non-uniformity is 4.7 %.

引用

页数：7

共 41 条

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