The time dependence of electrical current of Ar ion-etched ZnO

被引：0

作者：

Liu, C. M. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu 611731, Peoples R China

来源：

AIP ADVANCES | 2025年 / 15卷 / 02期

基金：

中国国家自然科学基金;

关键词：

PEROVSKITE-TYPE TITANATES; PHOTOLUMINESCENCE; DEGRADATION; MEMORIES;

D O I：

10.1063/5.0237980

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The time dependence of electrical current of Ar ion-etched ZnO is studied. It is found that Ar ion etching is beneficial for introducing vacancy defects such as the oxygen vacancy and zinc vacancy. At a high enough electrical bias voltage, there is an abrupt increase in electrical current with increasing bias voltage time, indicating the growth and formation of a conducting filament. The light illumination has proved to be helpful for filament formation and growth. A quantified relation between the electrical current and time is obtained. The filament growth mechanism can be ascribed to nucleation and growth of a new phase, which is determined by the Johnson-Mehl-Avrami equation.

引用

页数：5

共 32 条

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