Hybrid integrated multi-lane erbium-doped Si3N4 waveguide amplifiers

被引：0

作者：

Qiu, Zheru ^{[1
,2
]}

Ji, Xinru ^{[1
,2
]}

Liu, Yang ^{[1
,2
]}

Hafermann, Martin ^{[3
]}

Kim, Taegon ^{[4
]}

Olson, Joseph C. ^{[4
]}

Ning, Wang Rui ^{[1
,2
]}

Ronning, Carsten ^{[3
]}

Kippenberg, Tobias ^{[1
,2
]}

机构：

[1] Swiss Fed Inst Technol Lausanne EPFL, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland

[3] Friedrich Schiller Univ Jena, Inst Solid State Phys, Max Wien Pl 1, D-07743 Jena, Germany

[4] Appl Mat Inc, SPG Grp, Gloucester, MA 01930 USA

来源：

2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the integration of four individual erbium-doped waveguide optical amplifiers on a Si3N4 photonic integrated circuit hybrid integrated with a four-lane semiconductor pump laser diode chip. Each amplifier achieves 15 dB on-chip gain. (C) 2023 The Author(s)

引用

页数：3

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