Hybrid integrated multi-lane erbium-doped Si3N4 waveguide amplifiers

被引：0
|
作者：
Qiu, Zheru [1 ,2 ]
Ji, Xinru [1 ,2 ]
Liu, Yang [1 ,2 ]
Hafermann, Martin [3 ]
Kim, Taegon [4 ]
Olson, Joseph C. [4 ]
Ning, Wang Rui [1 ,2 ]
Ronning, Carsten [3 ]
Kippenberg, Tobias [1 ,2 ]
机构：
[1] Swiss Fed Inst Technol Lausanne EPFL, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland
[3] Friedrich Schiller Univ Jena, Inst Solid State Phys, Max Wien Pl 1, D-07743 Jena, Germany
[4] Appl Mat Inc, SPG Grp, Gloucester, MA 01930 USA
来源：
2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2024年
基金：
欧盟地平线“2020”;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the integration of four individual erbium-doped waveguide optical amplifiers on a Si3N4 photonic integrated circuit hybrid integrated with a four-lane semiconductor pump laser diode chip. Each amplifier achieves 15 dB on-chip gain. (C) 2023 The Author(s)
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页数：3
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