A 60 GHz Power Amplifier with Neutralization Capacitors and Compensation Inductors

被引：1

作者：

Kim, Joon-Hyung ^{[1
]}

Byeon, Chul-Woo ^{[2
]}

机构：

[1] Chungnam Natl Univ, Dept Semicond Convergence, Daejeon 34134, South Korea

[2] Dankook Univ, Coll Engn, Sch Elect & Elect Engn, Yongin 16890, South Korea

来源：

ELECTRONICS | 2024年 / 13卷 / 21期

关键词：

60; GHz; CMOS; gain; millimeter wave; neutralization capacitor; power-added efficiency; power amplifier; transformer; PAE;

D O I：

10.3390/electronics13214276

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we present a high power-added efficiency (PAE) and high gain per stage 60 GHz power amplifier (PA). The proposed PA consists of a two-stage common-source amplifier that incorporates neutralization capacitors and compensation inductors to enhance both gain and efficiency. The gain characteristics are analyzed, demonstrating that the proposed design improves both gain and efficiency. Implemented in 65 nm CMOS technology, the PA achieves a saturated output power of 13.4 dBm at 60 GHz, with a maximum PAE of 26.7% from a 1 V supply. The output 1 dB compression point is 10.5 dBm, with a PAE of 16%. The PA occupies a core chip area of 0.094 mm2.

引用

页数：10

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