A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-μm BiCMOS Technology

被引：0

作者：

Zhao, Zenglong ^{[1
]}

Chen, Xianghui ^{[1
]}

Meng, Fanyi ^{[1
]}

Ma, Kaixue ^{[1
]}

机构：

[1] Tianjin Univ, Tianjin 300072, Peoples R China

来源：

2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS 2024 | 2024年

关键词：

Ultra-wideband; bandwidth extension; low-noise amplifier (LNA); shunt feedback; peak inductors; resonant feedback; LNA;

D O I：

10.1109/IWS61525.2024.10713824

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a 22.6-to-73.9 GHz ultra-wideband low-noise amplifier in IHP SG13G2 0.13-mu m BiCMOS technology. The proposed LNA comprises two amplifier stages and achieves ultra-wideband performance by utilizing various bandwidth extension techniques, including shunt feedback, peak inductors, and resonant feedback compensation. Simultaneously, it significantly enhances gain flatness and noise figure (NF). The results indicate that the proposed amplifier shows a measured gain of 15.2 dB and a simulated NF ranging from 3.96 to 4.26 dB within the 3-dB bandwidth from 22.6 to 73.9 GHz, respectively. The circuit's footprint is just 0.18 mm(2), encompassing bond pads, and and its power consumption is a modest 17.5 mW, drawn from a 1.2 V supply.

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页数：3

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