AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes

被引：2

作者：

Lin, Tingting ^{[1
]}

Liu, Liwei ^{[2
]}

Liu, Xinguo ^{[2
]}

Liu, Chengyu ^{[2
]}

Zhou, Changjian ^{[1
]}

Wang, Wenliang ^{[2
]}

机构：

[1] South China Univ Technol, Sch Integrated Circuits, Guangzhou 511442, Peoples R China

[2] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Peoples R China

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2025年 / 234卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SCHOTTKY-BARRIER; GAN FILMS; ULTRAVIOLET; QUALITY; GROWTH;

D O I：

10.1140/epjs/s11734-025-01488-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlGaN has been considered as a promising candidate for future self-powered solar-blind ultraviolet (UV) photodetectors (PDs) due to the natural wide bandgap and environment endurance. A simple and effective method of annealing treatment is proposed to generate stable and excellent self-powered characteristics. To insight and utilize the auspicious material properties and fabricate high-performance AlGaN-based self-powered solar-blind UV PDs, the microstructure, optoelectronic properties, and electrode contact on the AlGaN with high Al content are investigated. From microscopic morphology observation, the AlGaN exhibits island-like topography with microparticles attached on the surface with the surface roughness of 1.4 nm. Moreover, the values of full width at half maximum (FWHM) of X-ray rocking curve (XRC) for AlGaN(0002) and AlGaN(10-12) are 342 and 522 arcsec, respectively, revealing the dislocation density of approximately 108 cm-2. Based on the results, the self-powered solar-blind PDs have been fabricated with Ni/Au electrodes after annealing for 5 min. Moreover, the photocurrent is enhanced five times compared with that of the device before annealing at 0 V bias @ 254 nm. The work paves the novel way for strengthening the performance of AlGaN-based self-powered solar-blind UV PDs.

引用

页码：369 / 374

页数：6

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