Colloidal AInSe2 (A = K, Rb, Cs) Nanocrystals with Tunable Crystal and Band Structures

被引：1

作者：

Sun, Zhaohong ^{[1
]}

Perez, Carlos Mora ^{[1
]}

Prezhdo, Oleg V. ^{[1
]}

Brutchey, Richard L. ^{[1
]}

机构：

[1] Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA

来源：

ACS NANOSCIENCE AU | 2024年 / 4卷 / 06期

关键词：

I-III-VI2; semiconductor; CIGS; nanocrystal; band gap engineering; chalcopyrite; TlGaSe2; GENERALIZED GRADIENT APPROXIMATION; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; SOLUTION-PHASE SYNTHESIS; WURTZITE-PHASE; SOLAR-CELLS; LOW-COST; EFFICIENCY; CHALCOPYRITE; EXCHANGE;

D O I：

10.1021/acsnanoscienceau.4c00022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wide band gap AInSe(2) (A = K, Rb, Cs) is an important interlayer material for improving the efficiency of Cu(In,Ga)(S,Se)(2) (CIGS) solar cells. Compared to high-vacuum deposition and solid-state synthesis, a less energy-intensive method is of interest for its fabrication. Herein, we present the rapid, low-temperature colloidal synthesis of AInSe(2) nanocrystals that opens a pathway for convenient solution processing. The crystal structures and electronic band structures of the nanocrystals were studied, and their particle morphology was found to be dependent on the choice of alkali metal and selenium precursors. Homogeneous solid solution (K,Rb,Cs)InSe2 nanocrystals were synthesized using a mixture of alkali metal precursors. Their compositions, lattice parameters, and band gaps were easily tuned based on the K:Rb:Cs precursor ratio, providing potential for interface engineering of CIGS nanocrystal-based solar cells.

引用

页码：381 / 390

页数：10