Synaptic neural circuit inspired by side-gated graphene synaptic transistors for neuromorphic computing

被引:0
|
作者
Wen, Huifeng [1 ,2 ]
Yong, Haoran [1 ,2 ]
He, Xiaoying [1 ,2 ]
Rao, Lan [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Beijing Key Lab Space Ground Interconnect & Conver, Beijing 100876, Peoples R China
来源
ENGINEERING RESEARCH EXPRESS | 2025年 / 7卷 / 01期
基金
中国国家自然科学基金;
关键词
electric double layer; graphene synaptic transistor; side-gated structure; synaptic neural circuit;
D O I
10.1088/2631-8695/adadc7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the rapid advancement of artificial intelligence, the energy consumption bottleneck inherent in the von Neumann computing architecture poses a significant obstacle to the future development of edge computing, artificial intelligence, and information technology. Consequently, it is crucial to develop synaptic neural circuits that exhibit memory and learning properties through synaptic plasticity. Drawing inspiration from the side-gated graphene synaptic transistor, we have designed a synaptic neural circuit comprising four key components: pre-voltage input, synaptic weight modulation, electric double-layer effect, and post-membrane current response. Through comprehensive simulations, we have successfully mimicked various synaptic behaviours, including long-term and short-term synaptic plasticity, paired-pulse facilitation, spiking-rate-dependent plasticity, spiking time-dependent plasticity, and Pavlovian associative learning. This approach establishes a robust framework for designing synaptic neural network circuits with advanced learning capabilities, thereby enhancing the practical applications of neural networks and machine learning.
引用
收藏
页数:11
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